BZX85C12-T50R
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likeBZX85C12-T50R
Brand：ON
Model：BZX85C12-T50R
stock：65315
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥0.06
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
| Installation type | Through-Hole |
| packing | TR,CT |
| series | - |
| Part status | On sale |
| working temperature | -65°C ~ 200°C |
| Encapsulation/Housing | DO-204AL,DO-41,axial |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Voltage at different If - forward (Vf) | 1.2 V @ 200 mA |
| Current - reverse leakage at different Vr | 500 nA @ 8.4 V |
| Voltage Zener (nominal value) (Vz) | 12 V |
| tolerance | ±5% |
| Power - maximum | 1 W |
| Impedance (maximum) (Zzt) | 9 Ohms |
Common problem
Industry trends
DRAM is severely oversupplied and is not expected to stop until the third quarter of 2023
Samsung M391A2K43DB1-CWE DDR4 16G 2933 memory memory IC chip
M393A2K40DB2-CVF Samsung DDR4 2933 16G server memory
M474A1K43DB1-CWE Samsung DDR4 3200 8GB notebook ECC memory
HMAA4GR7AJR8N-WM Hynix (SK Hyundai) DDR4 2933 32G server memory
The market estimates that the price of Q4 memory DRAM will be reduced by about 15%, and the price of DDR5 will be closer to DDR4
M393A4K40DB3-CWE Samsung DDR4 3200 32G Server Memory Stick RDIMM
M393A4G43AB3-CWE Samsung DDR4 3200 RECC 32G server memory module
M393A2K40CB2-CVF Samsung DDR4 RECC 16G
Advantages of Micron memory chips (why micron chips are recommended)
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