Installation type | Surface mount |
packing | TR,CT |
series | - |
Part status | On sale |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | 6-UFDFN Exposed Pad |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 800mW |
FET Type | 2 N Channel(two)Co leakage |
Drain source voltage (Vdss) | 20V |
Current at 25 ° C - continuous drain (Id) | 9A |
On resistance (maximum) for different Ids and Vgs | 13 mΩ @ 4A,4.5V |
Vgs (th) (maximum) for different Ids | 1.1V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 16nC @ 4.5V |
Input capacitance at different Vds (Ciss) (maximum) | 1550pF @ 10V |
FET function | Logic level gate |