DF11MR12W1M1B11BPSA1
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likeDF11MR12W1M1B11BPSA1
Brand：Infineon
Model：DF11MR12W1M1B11BPSA1
stock：29639
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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Price：1+
￥176.31
The market price fluctuates. Please consult the customer service for the actual price
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| Installation type | Base installation |
| packing | pallet |
| series | CoolSiC™+ |
| Part status | On sale |
| working temperature | -40°C ~ 150°C(TJ) |
| Encapsulation/Housing | module |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 20mW |
| FET Type | 2 N-channels(two) |
| Drain source voltage (Vdss) | 1200V(1.2kV) |
| Current at 25 ° C - continuous drain (Id) | 50A(Tj) |
| On resistance (maximum) for different Ids and Vgs | 22.5 mΩ @ 50A,15V |
| Vgs (th) (maximum) for different Ids | 5.55V @ 20mA |
| Gate charge (Qg) at different Vgs (maximum) | 124nC @ 15V |
| Input capacitance at different Vds (Ciss) (maximum) | 3680pF @ 800V |
| FET function | SiC |
Common problem
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