Installation type | Base installation |
packing | pallet |
series | CoolSiC™+ |
Part status | On sale |
working temperature | -40°C ~ 150°C(TJ) |
Encapsulation/Housing | module |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 20mW(Tc) |
FET Type | 2 N channels(half-bridge) |
Drain source voltage (Vdss) | 1200V(1.2kV) |
Current at 25 ° C - continuous drain (Id) | 100A(Tj) |
On resistance (maximum) for different Ids and Vgs | 11.3mΩ @ 100A,15V |
Vgs (th) (maximum) for different Ids | 5.55V @ 40mA |
Gate charge (Qg) at different Vgs (maximum) | 248nC @ 15V |
Input capacitance at different Vds (Ciss) (maximum) | 7.36nF @ 800V |
FET function | SiC |