IRF9953TR
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IRF9953TR
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IRF9953TR

Brand:Infineon
Model:IRF9953TR
stock:1699
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR
series HEXFET®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-SOIC(0.154,3.90mm wide)
Warehouse China/Hong Kong
quality Original genuine
Power - maximum 2W
FET Type 2 P Channel(two)
Drain source voltage (Vdss) 30V
Current at 25 ° C - continuous drain (Id) 2.3A
On resistance (maximum) for different Ids and Vgs 250 mΩ @ 1A,10V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 12nC @ 10V
Input capacitance at different Vds (Ciss) (maximum) 190pF @ 15V
FET function Logic level gate
Common problem
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