Installation type | Base installation |
packing | pipe |
series | - |
Part status | On sale |
working temperature | -40°C ~ 175°C(TJ) |
Encapsulation/Housing | module |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 2.031kW(Tc) |
FET Type | 2 N Channel(phase angle) |
Drain source voltage (Vdss) | 1200V(1.2kV) |
Current at 25 ° C - continuous drain (Id) | 495A(Tc) |
On resistance (maximum) for different Ids and Vgs | 5.2 mΩ @ 240A,20V |
Vgs (th) (maximum) for different Ids | 2.8V @ 6mA |
Gate charge (Qg) at different Vgs (maximum) | 1392nC @ 20V |
Input capacitance at different Vds (Ciss) (maximum) | 18.1pF @ 1000V |
FET function | SiC |