Installation type | Base installation |
packing | bulk |
series | - |
Part status | On sale |
working temperature | -40°C ~ 175°C(TJ) |
Encapsulation/Housing | module |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 690W(Tc) |
FET Type | 2 N Channel(two)Cosource |
Drain source voltage (Vdss) | 700V |
Current at 25 ° C - continuous drain (Id) | 241A(Tc) |
On resistance (maximum) for different Ids and Vgs | 9.5 mΩ @ 80A,20V |
Vgs (th) (maximum) for different Ids | 2.4V @ 8mA |
Gate charge (Qg) at different Vgs (maximum) | 430nC @ 20V |
Input capacitance at different Vds (Ciss) (maximum) | 9000pF @ 700V |
FET function | SiC |