Installation type | Base installation |
packing | bulk |
series | - |
Part status | On sale |
working temperature | -40°C ~ 150°C(TJ) |
Encapsulation/Housing | SP6 |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 1250W |
FET Type | 2 N channels(half-bridge) |
Drain source voltage (Vdss) | 1000V(1kV) |
Current at 25 ° C - continuous drain (Id) | 65A |
On resistance (maximum) for different Ids and Vgs | 156 mΩ @ 32.5A,10V |
Vgs (th) (maximum) for different Ids | 5V @ 6mA |
Gate charge (Qg) at different Vgs (maximum) | 562nC @ 10V |
Input capacitance at different Vds (Ciss) (maximum) | 15200pF @ 25V |
FET function | standard |