Installation type | Surface mount |
packing | TR,CT |
series | TrenchMOS™ |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | 8-TSSOP(0.173,4.40mm wide) |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 3.1W |
FET Type | 2 N-channels(two) |
Drain source voltage (Vdss) | 20V |
Current at 25 ° C - continuous drain (Id) | 9.9A |
On resistance (maximum) for different Ids and Vgs | 19 mΩ @ 3.5A,4.5V |
Vgs (th) (maximum) for different Ids | 700mV @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | 23.6nC @ 4.5V |
Input capacitance at different Vds (Ciss) (maximum) | 1366pF @ 16V |
FET function | Logic level gate |