Installation type | Surface mount |
packing | TR,CT |
series | - |
Part status | On sale |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | 8-SMD,feedthrough |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 640mW |
FET Type | 2 N-channels(two) |
Drain source voltage (Vdss) | 30V |
Current at 25 ° C - continuous drain (Id) | 2.2A |
On resistance (maximum) for different Ids and Vgs | 85 mΩ @ 2.9A,10V |
Vgs (th) (maximum) for different Ids | 3V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 7nC @ 10V |
Input capacitance at different Vds (Ciss) (maximum) | 140pF @ 15V |
FET function | Logic level gate |