FDG6321C
Home
Category
FET, MOSFET
FDG6321C
The pictures are for reference only
like

FDG6321C

Brand:ON
Model:FDG6321C
stock:2753
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.71
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 6-TSSOP,SC-88,SOT-363
Warehouse China/Hong Kong
quality Original genuine
Power - maximum 300mW
FET Type N and P Channel
Drain source voltage (Vdss) 25V
Current at 25 ° C - continuous drain (Id) 500mA,410mA
On resistance (maximum) for different Ids and Vgs 450 mΩ @ 500mA,4.5V
Vgs (th) (maximum) for different Ids 1.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 2.3nC @ 4.5V
Input capacitance at different Vds (Ciss) (maximum) 50pF @ 10V
FET function Logic level gate
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer