STS3DNE60L
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STS3DNE60L
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STS3DNE60L

Brand:ST
Model:STS3DNE60L
stock:16418
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Surface mount
packing TR
series STripFET™
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing 8-SOIC(0.154,3.90mm wide)
Warehouse China/Hong Kong
quality Original genuine
Power - maximum 2W
FET Type 2 N-channels(two)
Drain source voltage (Vdss) 60V
Current at 25 ° C - continuous drain (Id) 3A
On resistance (maximum) for different Ids and Vgs 80 mΩ @ 1.5A,10V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 13.5nC @ 4.5V
Input capacitance at different Vds (Ciss) (maximum) 815pF @ 25V
FET function Logic level gate
Common problem
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