Installation type | Surface mount |
packing | TR,CT |
series | DeepGATE™, STripFET™ VI |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | 8-PowerVDFN |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 62.5W |
FET Type | 2 P Channel(two) |
Drain source voltage (Vdss) | 100V |
Current at 25 ° C - continuous drain (Id) | 13A |
On resistance (maximum) for different Ids and Vgs | 180 mΩ @ 1.7A,10V |
Vgs (th) (maximum) for different Ids | 4V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 16.5nC @ 10V |
Input capacitance at different Vds (Ciss) (maximum) | 864pF @ 25V |
FET function | Logic level gate |