CSD88539NDT
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CSD88539NDT
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CSD88539NDT

Brand:TI
Model:CSD88539NDT
stock:13274
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.34
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product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series NexFET™
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-SOIC(0.154,3.90mm wide)
Warehouse China/Hong Kong
quality Original genuine
Power - maximum 2.1W
FET Type 2 N-channels(two)
Drain source voltage (Vdss) 60V
Current at 25 ° C - continuous drain (Id) 15A
On resistance (maximum) for different Ids and Vgs 28 mΩ @ 5A,10V
Vgs (th) (maximum) for different Ids 3.6V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 9.4nC @ 10V
Input capacitance at different Vds (Ciss) (maximum) 741pF @ 30V
FET function Logic level gate
Common problem
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