Installation type | Surface mount |
packing | TR |
series | - |
Part status | stop production |
working temperature | 150°C(TJ) |
Encapsulation/Housing | 8-SMD,feedthrough |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 1W |
FET Type | N and P Channel |
Drain source voltage (Vdss) | 20V,12V |
Current at 25 ° C - continuous drain (Id) | 100mA,5.5A |
On resistance (maximum) for different Ids and Vgs | 3 Ω @ 10mA,4V |
Vgs (th) (maximum) for different Ids | 1.1V @ 100µA |
Gate charge (Qg) at different Vgs (maximum) | - |
Input capacitance at different Vds (Ciss) (maximum) | 9.3pF @ 3V |
FET function | Logic level gate |