Memory format | DRAM |
Installation type | Surface mount |
packing | CT |
series | - |
Part status | On sale |
Memory type | Volatile |
storage capacity | 4Gb(256M x 16) |
Voltage - Supply | 1.06V ~ 1.17V,1.7V ~ 1.95V |
working temperature | -40°C ~ 95°C(TC) |
Memory interface | LVSTL_11 |
Clock frequency | 2.133 GHz |
Access time | - |
Encapsulation/Housing | 200-WFBGA |
Country of origin | Taiwan |
Warehouse | China/Hong Kong |
quality | Original genuine |
Write cycle time - words, pages | 18ns |