Memory format | DRAM |
Installation type | Surface mount |
packing | bulk |
series | Automotive, AEC-Q100 |
Part status | On sale |
Memory type | Volatile |
storage capacity | 1Gb(64M x 16) |
Voltage - Supply | 1.7V ~ 1.9V |
working temperature | -40°C ~ 105°C(TC) |
Memory interface | Paralleling |
Clock frequency | 400 MHz |
Access time | 15ns |
Access time | 400 ps |
Encapsulation/Housing | 84-TFBGA |
Country of origin | China/USA/Japan, etc |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | DDR2 |
Memory format | DRAM |
Installation type | Surface mount |
packing | bulk |
series | Automotive, AEC-Q100 |
Part status | On sale |
Memory type | Volatile |
storage capacity | 1Gb(64M x 16) |
Voltage - Supply | 1.7V ~ 1.9V |
working temperature | -40°C ~ 105°C(TC) |
Memory interface | Paralleling |
Clock frequency | 400 MHz |
Access time | 15ns |
Access time | 400 ps |
Encapsulation/Housing | 84-TFBGA |
Country of origin | China/USA/Japan, etc |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | DDR2 |
Random read | - |
DWPD | - |
Current - maximum | - |
Flash architecture | - |