MT53B384M16D1NK-062 WT ES:B TR IC DRAM 6GBIT 1600MHZ FBGA
The pictures are for reference only
likeMT53B384M16D1NK-062 WT ES:B TR IC DRAM 6GBIT 1600MHZ FBGA
Brand：Micron
Model：MT53B384M16D1NK-062 WT ES:B TR
stock：16626
Store：ShenZhen/Hongkong
DataSheet：
Search
Search
Price:
The market price fluctuates. Please consult the customer service for the actual price
Similar Product
product details
Common problem
Industry trends
| Memory format | DRAM |
| Installation type | - |
| packing | TR |
| series | - |
| Part status | On sale |
| Memory type | Volatile |
| storage capacity | 6Gb(384M x 16) |
| Voltage - Supply | 1.1V |
| working temperature | -30°C ~ 85°C(TC) |
| Memory interface | - |
| Clock frequency | 1.6 GHz |
| Access time | - |
| Access time | - |
| Encapsulation/Housing | - |
| Country of origin | China/USA/Japan, etc |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | LPDDR4 |
| Random read | - |
| DWPD | - |
| Current - maximum | - |
| Flash architecture | - |
Common problem
Industry trends
M393A4K40EB3-CWE Samsung DDR4 3200 RECC 32G server memory module
HMAA4GR7AJR8N-WM Hynix (SK Hyundai) DDR4 2933 32G server memory
M474A1K43DB1-CWE Samsung DDR4 3200 8GB notebook ECC memory
Texas Instruments' new Texas chip factory began mass production
M393A4K40DB2-CVF Samsung 32G DDR4 2933 RECC server memory module
M393A4K40CB2-CVF Samsung DDR4 2933 32GB server memory
HMA82GR7DJR8N-XN Hynix DDR4 3200 16G RDIMM server memory
M393A4K40DB3-CWE Samsung DDR4 3200 32G Server Memory Stick RDIMM
MTA36ASF4G72PZ-3G2J3 Microlight DDR4 3200 2Rx4RDIMM 32GB server memory module
Calling Samsung Sony! SK Hynix has developed a 100-million-pixel image sensor
Hot Products
Offer
