VN2210N2
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VN2210N2
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VN2210N2

Brand:Microchip
Model:VN2210N2
stock:4711
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥22.50
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Through-Hole
packing bag
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-39
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 1.7A(Tj)
Drive voltage (maximum RdsOn, minimum RdsOn) 5V,10V
On resistance (maximum) for different Ids and Vgs 350 mΩ @ 4A,10V
Vgs (th) (maximum) for different Ids 2.4V @ 10mA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 500 pF @ 25 V
FET function -
Power dissipation (maximum) 360mW(Tc)
Common problem
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