MSC080SMA330B4
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likeMSC080SMA330B4
Brand：Microchip
Model：MSC080SMA330B4
stock：41282
Store：ShenZhen/Hongkong
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￥166.67
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| Installation type | Through-Hole |
| packing | bulk |
| series | - |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | TO-247-4 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiC(Silicon carbide bonded crystal tube) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 3300 V |
| Current at 25 ° C - continuous drain (Id) | 41A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 20V |
| On resistance (maximum) for different Ids and Vgs | 105 mΩ @ 30A,20V |
| Vgs (th) (maximum) for different Ids | 2.97V @ 3mA |
| Gate charge (Qg) at different Vgs (maximum) | 55 nC @ 20 V |
| Vgs (max) | +23V,-10V |
| Input capacitance at different Vds (Ciss) (maximum) | 3462 pF @ 2400 V |
| FET function | - |
| Power dissipation (maximum) | 381W(Tc) |
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