TP5322K1-G
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likeTP5322K1-G
Brand：Microchip
Model：TP5322K1-G
stock：20832
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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| Installation type | Surface mount |
| packing | TR,CT |
| series | - |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | TO-236AB(SOT23) |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 220 V |
| Current at 25 ° C - continuous drain (Id) | 120mA(Tj) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 12 Ω @ 200mA,10V |
| Vgs (th) (maximum) for different Ids | 2.4V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | - |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 110 pF @ 25 V |
| FET function | - |
| Power dissipation (maximum) | 360mW(Ta) |
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