Installation type | Through-Hole |
packing | pipe |
series | - |
Part status | On sale |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | TO-247-4 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | SiCFET(silicon carbide) |
FET Type | N channels |
Drain source voltage (Vdss) | 1200 V |
Current at 25 ° C - continuous drain (Id) | 37A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 20V |
On resistance (maximum) for different Ids and Vgs | 100 mΩ @ 15A,20V |
Vgs (th) (maximum) for different Ids | 2.8V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | 64 nC @ 20 V |
Vgs (max) | +23V,-10V |
Input capacitance at different Vds (Ciss) (maximum) | 838 pF @ 1000 V |
FET function | - |
Power dissipation (maximum) | 200W(Tc) |