VN0300L-G-P002
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VN0300L-G-P002
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VN0300L-G-P002

Brand:Microchip
Model:VN0300L-G-P002
stock:34238
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.53
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Through-Hole
packing TR
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-92-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 640mA(Tj)
Drive voltage (maximum RdsOn, minimum RdsOn) 5V,10V
On resistance (maximum) for different Ids and Vgs 1.2 Ω @ 1A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 1mA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 190 pF @ 20 V
FET function -
Power dissipation (maximum) 1W(Tc)
Common problem
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