Installation type | Surface mount |
packing | pipe |
series | POWER MOS 7® |
Part status | On sale |
working temperature | - |
Encapsulation/Housing | D3 [S] |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 1200 V |
Current at 25 ° C - continuous drain (Id) | 3.5A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | - |
On resistance (maximum) for different Ids and Vgs | 4.7 Ω @ 1.75A,10V |
Vgs (th) (maximum) for different Ids | 5V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | 31 nC @ 10 V |
Vgs (max) | - |
Input capacitance at different Vds (Ciss) (maximum) | 715 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | - |