Installation type | Base installation |
packing | bulk |
series | POWER MOS 8™ |
Part status | On sale |
working temperature | -40°C ~ 150°C(TJ) |
Encapsulation/Housing | SOT-227 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 500 V |
Current at 25 ° C - continuous drain (Id) | 58A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 65 mΩ @ 42A,10V |
Vgs (th) (maximum) for different Ids | 5V @ 2.5mA |
Gate charge (Qg) at different Vgs (maximum) | 340 nC @ 10 V |
Vgs (max) | ±30V |
Input capacitance at different Vds (Ciss) (maximum) | 10800 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | 543W(Tc) |