APT58F50J
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APT58F50J
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APT58F50J

Brand:Microchip
Model:APT58F50J
stock:25294
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥44.51
The market price fluctuates. Please consult the customer service for the actual price
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Industry trends
Installation type Base installation
packing pipe
series POWER MOS 8™
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing ISOTOP®
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 500 V
Current at 25 ° C - continuous drain (Id) 58A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 65 mΩ @ 42A,10V
Vgs (th) (maximum) for different Ids 5V @ 2.5mA
Gate charge (Qg) at different Vgs (maximum) 340 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 13500 pF @ 25 V
FET function -
Power dissipation (maximum) 540W(Tc)
Common problem
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