APT26M100JCU2
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Brand：Microchip
Model：APT26M100JCU2
stock：32667
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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Price：1+
￥50.01
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| Installation type | Base installation |
| packing | bulk |
| series | POWER MOS 8™ |
| Part status | On sale |
| working temperature | -40°C ~ 150°C(TJ) |
| Encapsulation/Housing | SOT-227 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 1000 V |
| Current at 25 ° C - continuous drain (Id) | 26A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 396 mΩ @ 18A,10V |
| Vgs (th) (maximum) for different Ids | 5V @ 2.5mA |
| Gate charge (Qg) at different Vgs (maximum) | 305 nC @ 10 V |
| Vgs (max) | ±30V |
| Input capacitance at different Vds (Ciss) (maximum) | 7868 pF @ 25 V |
| FET function | - |
| Power dissipation (maximum) | 543W(Tc) |
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