APTM10SKM02G
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likeAPTM10SKM02G
Brand：Microchip
Model：APTM10SKM02G
stock：63813
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥302.83
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| Installation type | Base installation |
| packing | bulk |
| series | - |
| Part status | On sale |
| working temperature | -40°C ~ 150°C(TJ) |
| Encapsulation/Housing | SP6 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 100 V |
| Current at 25 ° C - continuous drain (Id) | 495A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 2.5 mΩ @ 200A,10V |
| Vgs (th) (maximum) for different Ids | 4V @ 10mA |
| Gate charge (Qg) at different Vgs (maximum) | 1360 nC @ 10 V |
| Vgs (max) | ±30V |
| Input capacitance at different Vds (Ciss) (maximum) | 40000 pF @ 25 V |
| FET function | - |
| Power dissipation (maximum) | 1250W(Tc) |
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