Installation type | Surface mount |
packing | TR,CT |
series | - |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | 8-PDFN(3.3x3.3) |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 25 V |
Current at 25 ° C - continuous drain (Id) | 60A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
On resistance (maximum) for different Ids and Vgs | 6 mΩ @ 20A,10V |
Vgs (th) (maximum) for different Ids | 1.7V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 14 nC @ 4.5 V |
Vgs (max) | +10V,-8V |
Input capacitance at different Vds (Ciss) (maximum) | 890 pF @ 12.5 V |
FET function | - |
Power dissipation (maximum) | 1.8W(Ta) |