APT100MC120JCU2
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APT100MC120JCU2
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APT100MC120JCU2

Brand:Microchip
Model:APT100MC120JCU2
stock:55618
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Base installation
packing bulk
series -
Part status On sale
working temperature -40°C ~ 150°C(TJ)
Encapsulation/Housing SOT-227
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology SiCFET(silicon carbide)
FET Type N channels
Drain source voltage (Vdss) 1200 V
Current at 25 ° C - continuous drain (Id) 143A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 20V
On resistance (maximum) for different Ids and Vgs 17 mΩ @ 100A,20V
Vgs (th) (maximum) for different Ids 2.3V @ 2mA
Gate charge (Qg) at different Vgs (maximum) 360 nC @ 20 V
Vgs (max) +25V,-10V
Input capacitance at different Vds (Ciss) (maximum) 5960 pF @ 1000 V
FET function -
Power dissipation (maximum) 600W(Tc)
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