STQ1HN60K3-AP
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likeSTQ1HN60K3-AP
Brand：ST
Model：STQ1HN60K3-AP
stock：55435
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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Price：1+
￥1.05
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| Installation type | Through-Hole |
| packing | CT,TB |
| series | SuperMESH3™ |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | TO-92-3 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 600 V |
| Current at 25 ° C - continuous drain (Id) | 400mA(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 8 Ω @ 600mA,10V |
| Vgs (th) (maximum) for different Ids | 4.5V @ 50µA |
| Gate charge (Qg) at different Vgs (maximum) | 9.5 nC @ 10 V |
| Vgs (max) | ±30V |
| Input capacitance at different Vds (Ciss) (maximum) | 140 pF @ 50 V |
| FET function | - |
| Power dissipation (maximum) | 3W(Tc) |
Common problem
Industry trends
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