Installation type | Through-Hole |
packing | pipe |
series | STripFET™ II |
Part status | stop production |
working temperature | 175°C(TJ) |
Encapsulation/Housing | I2PAK |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 55 V |
Current at 25 ° C - continuous drain (Id) | 80A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 5V,10V |
On resistance (maximum) for different Ids and Vgs | 8 mΩ @ 40A,10V |
Vgs (th) (maximum) for different Ids | 2.5V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 100 nC @ 4.5 V |
Vgs (max) | ±16V |
Input capacitance at different Vds (Ciss) (maximum) | 4350 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | 300W(Tc) |