SCT10N120H
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likeSCT10N120H
Brand：ST
Model：SCT10N120H
stock：95731
Store：ShenZhen/Hongkong
DataSheet：
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Price：1+
￥13.29
The market price fluctuates. Please consult the customer service for the actual price
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| Installation type | Surface mount |
| packing | TR,CT |
| series | - |
| Part status | On sale |
| working temperature | -55°C ~ 200°C(TJ) |
| Encapsulation/Housing | H2Pak-2 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiCFET(silicon carbide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 1200 V |
| Current at 25 ° C - continuous drain (Id) | 12A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 20V |
| On resistance (maximum) for different Ids and Vgs | 690 mΩ @ 6A,20V |
| Vgs (th) (maximum) for different Ids | 3.5V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 22 nC @ 20 V |
| Vgs (max) | +25V,-10V |
| Input capacitance at different Vds (Ciss) (maximum) | 290 pF @ 400 V |
| FET function | - |
| Power dissipation (maximum) | 150W(Tc) |
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