STR2P3LLH6
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STR2P3LLH6
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STR2P3LLH6

Brand:ST
Model:STR2P3LLH6
stock:67474
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.70
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series STripFET™ H6
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing SOT-23-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 2A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 56 mΩ @ 1A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 6 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 639 pF @ 25 V
FET function -
Power dissipation (maximum) 350mW(Tc)
Common problem
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