STD2NK100Z
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STD2NK100Z
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STD2NK100Z

Brand:ST
Model:STD2NK100Z
stock:10471
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥3.44
The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series SuperMESH™
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing DPAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 1000 V
Current at 25 ° C - continuous drain (Id) 1.85A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 8.5 Ω @ 900mA,10V
Vgs (th) (maximum) for different Ids 4.5V @ 50µA
Gate charge (Qg) at different Vgs (maximum) 16 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 499 pF @ 25 V
FET function -
Power dissipation (maximum) 70W(Tc)
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