Installation type | Through-Hole |
packing | pipe |
series | STripFET™ II |
Part status | On sale |
working temperature | -65°C ~ 175°C(TJ) |
Encapsulation/Housing | TO-220 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 60 V |
Current at 25 ° C - continuous drain (Id) | 60A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V,5V |
On resistance (maximum) for different Ids and Vgs | 14 mΩ @ 30A,10V |
Vgs (th) (maximum) for different Ids | 1V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 66 nC @ 4.5 V |
Vgs (max) | ±15V |
Input capacitance at different Vds (Ciss) (maximum) | 2000 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | 110W(Tc) |