STB30N65M2AG
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STB30N65M2AG
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STB30N65M2AG

Brand:ST
Model:STB30N65M2AG
stock:80956
Store:ShenZhen/Hongkong
DataSheet: Search
Price:1+
¥5.68
The market price fluctuates. Please consult the customer service for the actual price
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Common problem
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Installation type Surface mount
packing TR,CT
series Automotive, AEC-Q101
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing D²PAK(TO-263)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 20A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 180 mΩ @ 10A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 30.8 nC @ 10 V
Vgs (max) ±25V
Input capacitance at different Vds (Ciss) (maximum) 1440 pF @ 100 V
FET function -
Power dissipation (maximum) 190W(Tc)
Common problem
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