STD5NM50AG
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STD5NM50AG
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STD5NM50AG

Brand:ST
Model:STD5NM50AG
stock:40879
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥2.56
The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series MDmesh™
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-252(D-Pak)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 500 V
Current at 25 ° C - continuous drain (Id) 7.5A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 800 mΩ @ 2.5A,10V
Vgs (th) (maximum) for different Ids 5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 13 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 415 pF @ 100 V
FET function -
Power dissipation (maximum) 100W(Tc)
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