SCTW35N65G2VAG
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likeSCTW35N65G2VAG
Brand：ST
Model：SCTW35N65G2VAG
stock：23030
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥26.11
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| Installation type | Through-Hole |
| packing | pipe |
| series | Automotive, AEC-Q101 |
| Part status | On sale |
| working temperature | -55°C ~ 200°C(TJ) |
| Encapsulation/Housing | HiP247™ |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiCFET(silicon carbide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 650 V |
| Current at 25 ° C - continuous drain (Id) | 45A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 18V,20V |
| On resistance (maximum) for different Ids and Vgs | 67mΩ @ 20A,20V |
| Vgs (th) (maximum) for different Ids | 5V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 73 nC @ 20 V |
| Vgs (max) | +22V,-10V |
| Input capacitance at different Vds (Ciss) (maximum) | 1370 pF @ 400 V |
| FET function | - |
| Power dissipation (maximum) | 240W(Tc) |
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