SCTWA60N120G2-4
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likeSCTWA60N120G2-4
Brand：ST
Model：SCTWA60N120G2-4
stock：99588
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥42.15
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| Installation type | Through-Hole |
| packing | pipe |
| series | - |
| Part status | On sale |
| working temperature | -55°C ~ 200°C(TJ) |
| Encapsulation/Housing | TO-247-4 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiCFET(silicon carbide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 1200 V |
| Current at 25 ° C - continuous drain (Id) | 60A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 18V |
| On resistance (maximum) for different Ids and Vgs | 52 mΩ @ 30A,18V |
| Vgs (th) (maximum) for different Ids | 5V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 94 nC @ 18 V |
| Vgs (max) | +22V,-10V |
| Input capacitance at different Vds (Ciss) (maximum) | 1969 pF @ 800 V |
| FET function | - |
| Power dissipation (maximum) | 388W(Tc) |
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