STW68N60M6-4
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STW68N60M6-4
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STW68N60M6-4

Brand:ST
Model:STW68N60M6-4
stock:83089
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥11.94
The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Through-Hole
packing pipe
series MDmesh™ M6
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-247-4
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 600 V
Current at 25 ° C - continuous drain (Id) 63A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 41 mΩ @ 31.5A,10V
Vgs (th) (maximum) for different Ids 4.75V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 106 nC @ 10 V
Vgs (max) ±25V
Input capacitance at different Vds (Ciss) (maximum) 4360 pF @ 100 V
FET function -
Power dissipation (maximum) 390W(Tc)
Common problem
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