STE48NM60
Home
Category
MOSFET
STE48NM60
The pictures are for reference only
like

STE48NM60

Brand:ST
Model:STE48NM60
stock:16370
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Base installation
packing pipe
series MDmesh™
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing ISOTOP®
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 48A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 110 mΩ @ 22.5A,10V
Vgs (th) (maximum) for different Ids 5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 134 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 3800 pF @ 25 V
FET function -
Power dissipation (maximum) 450W(Tc)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer