Installation type | Surface mount |
packing | TR |
series | MESH OVERLAY™ |
Part status | stop production |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | D2PAK |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 33 V |
Current at 25 ° C - continuous drain (Id) | 80A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 9 mΩ @ 40A,10V |
Vgs (th) (maximum) for different Ids | 4V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | 80 nC @ 10 V |
Vgs (max) | Clamp bit |
Input capacitance at different Vds (Ciss) (maximum) | 2700 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | 300W(Tc) |