STV160NF02LAT4
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STV160NF02LAT4
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STV160NF02LAT4

Brand:ST
Model:STV160NF02LAT4
stock:50736
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series STripFET™
Part status stop production
working temperature 175°C(TJ)
Encapsulation/Housing 10-PowerSO
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 160A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 5V,10V
On resistance (maximum) for different Ids and Vgs 2.7mΩ @ 80A,10V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 175 nC @ 10 V
Vgs (max) ±15V
Input capacitance at different Vds (Ciss) (maximum) 5500 pF @ 15 V
FET function -
Power dissipation (maximum) 210W(Tc)
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