STB85NS04Z
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STB85NS04Z
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STB85NS04Z

Brand:ST
Model:STB85NS04Z
stock:27459
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series SAFeFET™
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing D2PAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 33 V
Current at 25 ° C - continuous drain (Id) 80A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 15 mΩ @ 30A,10V
Vgs (th) (maximum) for different Ids 4V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 100 nC @ 10 V
Vgs (max) ±18V
Input capacitance at different Vds (Ciss) (maximum) 2500 pF @ 25 V
FET function -
Power dissipation (maximum) 215W(Tc)
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