STI8N65M5
Home
Category
MOSFET
STI8N65M5
The pictures are for reference only
like

STI8N65M5

Brand:ST
Model:STI8N65M5
stock:31639
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Through-Hole
packing pipe
series MDmesh™ V
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing I2PAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 7A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 600 mΩ @ 3.5A,10V
Vgs (th) (maximum) for different Ids 5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 15 nC @ 10 V
Vgs (max) ±25V
Input capacitance at different Vds (Ciss) (maximum) 690 pF @ 100 V
FET function -
Power dissipation (maximum) 70W(Tc)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer