STB6N62K3
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Brand：ST
Model：STB6N62K3
stock：64366
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | TR |
| series | SuperMESH3™ |
| Part status | stop production |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | D²PAK(TO-263) |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 620 V |
| Current at 25 ° C - continuous drain (Id) | 5.5A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 1.2 Ω @ 2.8A,10V |
| Vgs (th) (maximum) for different Ids | 4.5V @ 50µA |
| Gate charge (Qg) at different Vgs (maximum) | 34 nC @ 10 V |
| Vgs (max) | ±30V |
| Input capacitance at different Vds (Ciss) (maximum) | 875 pF @ 50 V |
| FET function | - |
| Power dissipation (maximum) | 90W(Tc) |
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