STL8P2UH7
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Brand：ST
Model：STL8P2UH7
stock：282
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | TR,CT |
| series | DeepGATE™, STripFET™ VII |
| Part status | stop production |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | PowerFlat™(2x2) |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 20 V |
| Current at 25 ° C - continuous drain (Id) | 8A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 1.5V,4.5V |
| On resistance (maximum) for different Ids and Vgs | 22.5 mΩ @ 4A,4.5V |
| Vgs (th) (maximum) for different Ids | 1V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 22 nC @ 4.5 V |
| Vgs (max) | ±8V |
| Input capacitance at different Vds (Ciss) (maximum) | 2390 pF @ 16 V |
| FET function | - |
| Power dissipation (maximum) | 2.4W(Tc) |
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