STP10N105K5
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STP10N105K5
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STP10N105K5

Brand:ST
Model:STP10N105K5
stock:64798
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Through-Hole
packing pipe
series MDmesh™ K5
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-220
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 1050 V
Current at 25 ° C - continuous drain (Id) 6A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 1.3 Ω @ 3A,10V
Vgs (th) (maximum) for different Ids 5V @ 100µA
Gate charge (Qg) at different Vgs (maximum) 21.5 nC @ 10 V
Vgs (max) 30V
Input capacitance at different Vds (Ciss) (maximum) 545 pF @ 100 V
FET function -
Power dissipation (maximum) 130W(Tc)
Common problem
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