STP185N10F3
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STP185N10F3
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STP185N10F3

Brand:ST
Model:STP185N10F3
stock:68637
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Through-Hole
packing pipe
series STripFET™
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing TO-220
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 120A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 4.8 mΩ @ 60A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) -
FET function -
Power dissipation (maximum) 300W(Tc)
Common problem
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